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GT50JR21(STA1,E,S)

Toshiba Semiconductor and Storage

Product No:

GT50JR21(STA1,E,S)

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

PB-F IGBT / TRANSISTOR TO-3PN(OS

Quantity:

Delivery:

Payment:

In Stock : 23

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.465

    $4.465

  • 10

    $3.7487

    $37.487

  • 100

    $3.03278

    $303.278

  • 500

    $2.695815

    $1347.9075

  • 1000

    $2.308291

    $2308.291

  • 2000

    $2.173496

    $4346.992

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Power - Max 230 W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Product Status Active
Test Condition -
Switching Energy -
Td (on/off) @ 25°C -
Operating Temperature 175°C (TJ)
Supplier Device Package TO-3P(N)
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A
Current - Collector (Ic) (Max) 50 A
Current - Collector Pulsed (Icm) 100 A
Voltage - Collector Emitter Breakdown (Max) 600 V