GT15J341,S4X

Toshiba Semiconductor and Storage

Product No:

GT15J341,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

PB-F DISCRETE IGBT TRANSISTOR TO

Quantity:

Delivery:

Payment:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.691

    $1.691

  • 10

    $1.40125

    $14.0125

  • 100

    $1.11511

    $111.511

  • 500

    $0.943578

    $471.789

  • 1000

    $0.800603

    $800.603

  • 2000

    $0.76058

    $1521.16

  • 5000

    $0.731984

    $3659.92

  • 10000

    $0.70775

    $7077.5

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
IGBT Type -
Input Type Standard
Power - Max 30 W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Test Condition 300V, 15A, 33Ohm, 15V
Switching Energy 300µJ (on), 300µJ (off)
Td (on/off) @ 25°C 60ns/170ns
Operating Temperature 150°C (TJ)
Supplier Device Package TO-220SIS
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 15A
Reverse Recovery Time (trr) 80 ns
Current - Collector (Ic) (Max) 15 A
Current - Collector Pulsed (Icm) 60 A
Voltage - Collector Emitter Breakdown (Max) 600 V