GT20J341,S4X(S

Toshiba Semiconductor and Storage

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GT20J341,S4X(S

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TO-220SIS

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Description:

DISCRETE IGBT TRANSISTOR TO-220S

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Power - Max	45 W
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Test Condition	300V, 20A, 33Ohm, 15V
Switching Energy	500µJ (on), 400µJ (off)
Td (on/off) @ 25°C	60ns/240ns
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-220SIS
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Reverse Recovery Time (trr)	90 ns
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	80 A
Voltage - Collector Emitter Breakdown (Max)	600 V