GT30J65MRB,S1E

Toshiba Semiconductor and Storage

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GT30J65MRB,S1E

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TO-3P(N)

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Description:

650V SILICON N-CHANNEL IGBT, TO-

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Gate Charge	70 nC
Power - Max	200 W
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Test Condition	400V, 15A, 56Ohm, 15V
Switching Energy	1.4mJ (on), 220µJ (off)
Base Product Number	GT30J65
Td (on/off) @ 25°C	75ns/400ns
Operating Temperature	175°C (TJ)
Supplier Device Package	TO-3P(N)
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Reverse Recovery Time (trr)	200 ns
Current - Collector (Ic) (Max)	60 A
Voltage - Collector Emitter Breakdown (Max)	650 V