XPN12006NC,L1XHQ

Toshiba Semiconductor and Storage

Product No:

XPN12006NC,L1XHQ

Package:

8-TSON Advance-WF (3.1x3.1)

Batch:

-

Datasheet:

Description:

MOSFET N-CH 60V 20A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 10000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.121

    $1.121

  • 10

    $0.9196

    $9.196

  • 100

    $0.71535

    $71.535

  • 500

    $0.606309

    $303.1545

  • 1000

    $0.493905

    $493.905

  • 2000

    $0.464949

    $929.898

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 200µA
Base Product Number XPN12006
Operating Temperature -55°C ~ 175°C
Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 10V
Power Dissipation (Max) 65W (Tc)
Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 20A