SSM3J356R,LF

Toshiba Semiconductor and Storage

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SSM3J356R,LF

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Package:

SOT-23F

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Description:

MOSFET P-CH 60V 2A SOT-23F

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In Stock : 275150

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	+10V, -20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SOT-23-3 Flat Leads
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Base Product Number	SSM3J356
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	300mOhm @ 1A, 10V
Power Dissipation (Max)	1W (Ta)
Supplier Device Package	SOT-23F
Gate Charge (Qg) (Max) @ Vgs	8.3 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)