TW140Z120C,S1F

Toshiba Semiconductor and Storage

Product No:

TW140Z120C,S1F

Package:

TO-247-4L(X)

Batch:

-

Datasheet:

-

Description:

G3 1200V SIC-MOSFET TO-247-4L 14

Quantity:

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Product Information

Parameter Info

User Guide

Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) +25V, -10V
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 5V @ 1mA
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 191mOhm @ 10A, 18V
Power Dissipation (Max) 107W (Tc)
Supplier Device Package TO-247-4L(X)
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 18 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 691 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)