TW045N120C,S1F

Toshiba Semiconductor and Storage

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TW045N120C,S1F

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Package:

TO-247

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Description:

G3 1200V SIC-MOSFET TO-247 45MO

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	+25V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 6.7mA
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 18V
Power Dissipation (Max)	182W (Tc)
Supplier Device Package	TO-247
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 18 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)