TPH4R10ANL,L1Q

Toshiba Semiconductor and Storage

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TPH4R10ANL,L1Q

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8-SOP Advance (5x5)

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Description:

MOSFET N-CH 100V 92A/70A 8SOP

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Base Product Number	TPH4R10
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	4.1mOhm @ 35A, 10V
Power Dissipation (Max)	2.5W (Ta), 67W (Tc)
Supplier Device Package	8-SOP Advance (5x5)
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	6300 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	92A (Ta), 70A (Tc)