TPH2R306NH1,LQ

Toshiba Semiconductor and Storage

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TPH2R306NH1,LQ

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Package:

8-SOP Advance (5x5.75)

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Description:

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	2.3mOhm @ 50A, 10V
Power Dissipation (Max)	800mW (Ta), 170W (Tc)
Supplier Device Package	8-SOP Advance (5x5.75)
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	6100 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	6.5V, 10V
Current - Continuous Drain (Id) @ 25°C	136A (Tc)