TK4P55D(T6RSS-Q)

Toshiba Semiconductor and Storage

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TK4P55D(T6RSS-Q)

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D-Pak

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Description:

MOSFET N-CH 550V 4A DPAK

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Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	4.4V @ 1mA
Base Product Number	TK4P55
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	1.88Ohm @ 2A, 10V
Power Dissipation (Max)	80W (Tc)
Supplier Device Package	D-Pak
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Drain to Source Voltage (Vdss)	550 V
Input Capacitance (Ciss) (Max) @ Vds	490 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	4A (Ta)