TK3A60DA(Q,M)

Toshiba Semiconductor and Storage

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TK3A60DA(Q,M)

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Package:

TO-220SIS

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Description:

MOSFET N-CH 600V 2.5A TO220SIS

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Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVII
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4.4V @ 1mA
Base Product Number	TK3A60
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.3A, 10V
Power Dissipation (Max)	30W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)