TK35A65W,S5X

Toshiba Semiconductor and Storage

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TK35A65W,S5X

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TO-220SIS

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MOSFET N-CH 650V 35A TO220SIS

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Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 2.1mA
Base Product Number	TK35A65
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	80mOhm @ 17.5A, 10V
Power Dissipation (Max)	50W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	35A (Ta)