TK155E65Z,S1X

Toshiba Semiconductor and Storage

Product No:

TK155E65Z,S1X

Manufacturer:

Package:

TO-220

Batch:

Datasheet:

Description:

650V DTMOS VI TO-220 155MOHM

Quantity:

Delivery:

Payment:

In Stock : 164

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 730µA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	155mOhm @ 9A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1635 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)