TK11P65W,RQ

Toshiba Semiconductor and Storage

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TK11P65W,RQ

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DPAK

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Description:

MOSFET N-CH 650V 11.1A DPAK

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Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 450µA
Base Product Number	TK11P65
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	440mOhm @ 5.5A, 10V
Power Dissipation (Max)	100W (Tc)
Supplier Device Package	DPAK
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	11.1A (Ta)