SSM6J512NU,LF

Toshiba Semiconductor and Storage

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SSM6J512NU,LF

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Package:

6-UDFNB (2x2)

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Description:

MOSFET P-CH 12V 10A 6UDFNB

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVII
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM6J512
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	16.2mOhm @ 4A, 8V
Power Dissipation (Max)	1.25W (Ta)
Supplier Device Package	6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs	19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)	12 V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)