SSM6J216FE,LF

Toshiba Semiconductor and Storage

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SSM6J216FE,LF

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Package:

ES6

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Description:

MOSFET P-CHANNEL 12V 4.8A ES6

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM6J216
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	32mOhm @ 3.5A, 4.5V
Power Dissipation (Max)	700mW (Ta)
Supplier Device Package	ES6
Gate Charge (Qg) (Max) @ Vgs	12.7 nC @ 4.5 V
Drain to Source Voltage (Vdss)	12 V
Input Capacitance (Ciss) (Max) @ Vds	1040 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	4.8A (Ta)