Toshiba Semiconductor and Storage
Product No:
SSM6G18NU,LF
Manufacturer:
Package:
6-µDFN (2x2)
Batch:
-
Datasheet:
-
Description:
MOSFET P-CH 20V 2A 6UDFN
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.4465
$0.4465
10
$0.32015
$3.2015
100
$0.161405
$16.1405
500
$0.143032
$71.516
1000
$0.111302
$111.302
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
FET Type | P-Channel |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
FET Feature | Schottky Diode (Isolated) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Base Product Number | SSM6G18 |
Operating Temperature | 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 112mOhm @ 1A, 4.5V |
Power Dissipation (Max) | 1W (Ta) |
Supplier Device Package | 6-µDFN (2x2) |
Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |