SSM3K35MFV(TPL3)

Toshiba Semiconductor and Storage

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SSM3K35MFV(TPL3)

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Package:

VESM

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Description:

MOSFET N-CH 20V 180MA VESM

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Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVI
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	SOT-723
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	SSM3K35
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	3Ohm @ 50mA, 4V
Power Dissipation (Max)	150mW (Ta)
Supplier Device Package	VESM
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	9.5 pF @ 3 V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4V
Current - Continuous Drain (Id) @ 25°C	180mA (Ta)