SSM3J306T(TE85L,F)

Toshiba Semiconductor and Storage

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SSM3J306T(TE85L,F)

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Package:

TSM

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Description:

MOSFET P-CH 30V 2.4A TSM

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Product Status	Obsolete
Vgs(th) (Max) @ Id	-
Base Product Number	SSM3J306
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	117mOhm @ 1A, 10V
Power Dissipation (Max)	700mW (Ta)
Supplier Device Package	TSM
Gate Charge (Qg) (Max) @ Vgs	2.5 nC @ 15 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)