SSM3J143TU,LXHF

Toshiba Semiconductor and Storage

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SSM3J143TU,LXHF

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UFM

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Description:

SMOS P-CH VDSS:-20V VGSS:-8/+6V

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Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSVI
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	+6V, -8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Leads
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	29.8mOhm @ 3A, 4.5V
Power Dissipation (Max)	500mW (Ta)
Supplier Device Package	UFM
Gate Charge (Qg) (Max) @ Vgs	12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	840 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)