2SK3868(Q,M)

Toshiba Semiconductor and Storage

Product No:

2SK3868(Q,M)

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Package:

TO-220SIS

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Description:

MOSFET N-CH 500V 5A TO220SIS

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	2SK3868
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	1.7Ohm @ 2.5A, 10V
Power Dissipation (Max)	35W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Drain to Source Voltage (Vdss)	500 V
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)