TSM200N03DPQ33 RGG

Taiwan Semiconductor Corporation

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TSM200N03DPQ33 RGG

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Package:

8-PDFN (3x3)

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Description:

MOSFET 2 N-CH 30V 20A 8PDFN

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Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tape & Reel (TR)
Technology	MOSFET (Metal Oxide)
FET Feature	-
Power - Max	20W
Configuration	2 N-Channel (Dual)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Base Product Number	TSM200
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	20mOhm @ 10A, 10V
Supplier Device Package	8-PDFN (3x3)
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Input Capacitance (Ciss) (Max) @ Vds	345pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)