SIHD4N80E-GE3
Vishay Siliconix
Product No:
SIHD4N80E-GE3
Manufacturer:
Package:
TO-252AA
Batch:
-
Datasheet:
Description:
MOSFET N-CH 800V 4.3A DPAK
Quantity:
Delivery:
Payment:
In Stock : 3000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.6055
$1.6055
10
$1.33285
$13.3285
100
$1.060865
$106.0865
500
$0.897655
$448.8275
1000
$0.761653
$761.653
2000
$0.723568
$1447.136
5000
$0.696369
$3481.845
10000
$0.673312
$6733.12
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHD4 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.27Ohm @ 2A, 10V |
| Power Dissipation (Max) | 69W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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