RT1A060APTR

Rohm Semiconductor

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RT1A060APTR

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8-TSST

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Description:

MOSFET P-CH 12V 6A 8TSST

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Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	-8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	1V @ 1mA
Base Product Number	RT1A060
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	19mOhm @ 6A, 4.5V
Power Dissipation (Max)	600mW (Ta)
Supplier Device Package	8-TSST
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 4.5 V
Drain to Source Voltage (Vdss)	12 V
Input Capacitance (Ciss) (Max) @ Vds	7800 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)