RN1910FE,LF(CT
Toshiba Semiconductor and Storage
Product No:
RN1910FE,LF(CT
Manufacturer:
Package:
ES6
Batch:
-
Datasheet:
-
Description:
TRANS 2NPN PREBIAS 0.1W ES6
Quantity:
Delivery:
Payment:
In Stock : 764 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.2565
$0.2565
10
$0.20615
$2.0615
100
$0.109345
$10.9345
500
$0.071972
$35.986
1000
$0.048934
$48.934
2000
$0.044137
$88.274
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Base Product Number | RN1910 |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 250MHz |
| Supplier Device Package | ES6 |
| Resistor - Emitter Base (R2) | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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