RN1710JE(TE85L,F)

Toshiba Semiconductor and Storage

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RN1710JE(TE85L,F)

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Package:

ESV

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Description:

NPN X 2 BRT Q1BSR=4.7KOHM Q1BER=

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Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tape & Reel (TR)
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Product Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Base Product Number	RN1710
Resistor - Base (R1)	4.7kOhms
Frequency - Transition	250MHz
Supplier Device Package	ESV
Resistor - Emitter Base (R2)	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V