RFP4N35

Harris Corporation

Product No:

RFP4N35

Manufacturer:

Harris Corporation

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Mfr Harris Corporation
Series -
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V
Power Dissipation (Max) 75W (Tc)
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 350 V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)