RFD3N08LSM9A

Harris Corporation

Product No:

RFD3N08LSM9A

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Package:

TO-252-3 (DPAK)

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Description:

N-CHANNEL POWER MOSFET

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Mfr	Harris Corporation
Series	-
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±10V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	800mOhm @ 3A, 5V
Power Dissipation (Max)	30W (Tc)
Supplier Device Package	TO-252-3 (DPAK)
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	125 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)