PHB18NQ10T,118

NXP USA Inc.

Product No:

PHB18NQ10T,118

Manufacturer:

NXP USA Inc.

Package:

D2PAK

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 18A D2PAK

Quantity:

Delivery:

Payment:

In Stock : 1966

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 671

    $0.4275

    $286.8525

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Product Information

Parameter Info

User Guide

Mfr NXP USA Inc.
Series TrenchMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V
Power Dissipation (Max) 79W (Tc)
Supplier Device Package D2PAK
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)