PDTC115EMB,315

NXP Semiconductors

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PDTC115EMB,315

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Package:

DFN1006B-3

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Description:

PDTC115E - NPN RESISTOR-EQUIPPED

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Mfr	NXP Semiconductors
Series	-
Package	Bulk
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Product Status	Active
Transistor Type	NPN - Pre-Biased
Base Product Number	PDTC115
Resistor - Base (R1)	100 kOhms
Frequency - Transition	230 MHz
Supplier Device Package	DFN1006B-3
Resistor - Emitter Base (R2)	100 kOhms
Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	20 mA
Current - Collector Cutoff (Max)	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50 V