GeneSiC Semiconductor
Product No:
MURT40010
Manufacturer:
Package:
Three Tower
Batch:
-
Description:
DIODE MODULE 100V 200A 3TOWER
Quantity:
Delivery:
Payment:
Please send RFQ , we will respond immediately.
Mfr | GeneSiC Semiconductor |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Series | - |
Package | Bulk |
Technology | Standard |
Mounting Type | Chassis Mount |
Package / Case | Three Tower |
Product Status | Active |
Diode Configuration | 1 Pair Common Cathode |
Supplier Device Package | Three Tower |
Reverse Recovery Time (trr) | 125 ns |
Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
Voltage - DC Reverse (Vr) (Max) | 100 V |
Operating Temperature - Junction | -55°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 200 A |
Current - Average Rectified (Io) (per Diode) | 200A |