MSCSM120AM042CT6LIAG

Microchip Technology

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SP6C LI

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PM-MOSFET-SIC-SBD~-SP6C LI

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Mfr	Microchip Technology
Series	-
Package	Tube
Technology	Silicon Carbide (SiC)
FET Feature	-
Power - Max	2.031kW (Tc)
Configuration	2 N Channel (Phase Leg)
Mounting Type	Chassis Mount
Package / Case	Module
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 6mA
Base Product Number	MSCSM120
Operating Temperature	-40°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	5.2mOhm @ 240A, 20V
Supplier Device Package	SP6C LI
Gate Charge (Qg) (Max) @ Vgs	1392nC @ 20V
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds	18100pF @ 1kV
Current - Continuous Drain (Id) @ 25°C	495A (Tc)