IRF9Z34NLPBF

Infineon Technologies

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IRF9Z34NLPBF

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Package:

TO-262

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Description:

PLANAR 40<-<100V

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Mfr	Infineon Technologies
Series	HEXFET®
Package	Bulk
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	100mOhm @ 10A, 10V
Power Dissipation (Max)	3.8W (Ta), 68W (Tc)
Supplier Device Package	TO-262
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Drain to Source Voltage (Vdss)	55 V
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	19A (Tc)