IRF610
Harris Corporation
Product No:
IRF610
Manufacturer:
Package:
TO-220AB
Batch:
-
Datasheet:
-
Description:
3.3A 200V 1.500 OHM N-CHANNEL
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
Please send RFQ , we will respond immediately.
Product Information
Parameter Info
User Guide
| Mfr | Harris Corporation |
| Series | - |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | IRF610 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2A, 10V |
| Power Dissipation (Max) | 36W (Tc) |
| Supplier Device Package | TO-220AB |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
