IDW10G65C5XKSA1

Infineon Technologies

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IDW10G65C5XKSA1

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Package:

PG-TO247-3

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Description:

DIODE SIL CARB 650V 10A TO247-3

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Mfr	Infineon Technologies
Speed	No Recovery Time > 500mA (Io)
Series	CoolSiC™+
Package	Bulk
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Capacitance @ Vr, F	300pF @ 1V, 1MHz
Supplier Device Package	PG-TO247-3
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	180 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A