Goford Semiconductor
Product No:
GT110N06D3
Manufacturer:
Package:
8-DFN (3.15x3.05)
Batch:
-
Description:
N60V, 35A,RD<11M@10V,VTH1.0V~2.4
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.684
$0.684
10
$0.5928
$5.928
100
$0.41021
$41.021
500
$0.342741
$171.3705
1000
$0.291688
$291.688
2000
$0.259787
$519.574
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Mfr | Goford Semiconductor |
Series | GT |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 11mOhm @ 14A, 10V |
Power Dissipation (Max) | 25W (Tc) |
Supplier Device Package | 8-DFN (3.15x3.05) |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
Drain to Source Voltage (Vdss) | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 1059 pF @ 30 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |