GT110N06D3

Goford Semiconductor

Product No:

GT110N06D3

Manufacturer:

Goford Semiconductor

Package:

8-DFN (3.15x3.05)

Batch:

-

Datasheet:

Description:

N60V, 35A,RD<11M@10V,VTH1.0V~2.4

Quantity:

Delivery:

Payment:

In Stock : 9893

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.684

    $0.684

  • 10

    $0.5928

    $5.928

  • 100

    $0.41021

    $41.021

  • 500

    $0.342741

    $171.3705

  • 1000

    $0.291688

    $291.688

  • 2000

    $0.259787

    $519.574

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Product Information

Parameter Info

User Guide

Mfr Goford Semiconductor
Series GT
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 11mOhm @ 14A, 10V
Power Dissipation (Max) 25W (Tc)
Supplier Device Package 8-DFN (3.15x3.05)
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1059 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)