GT105N10F

Goford Semiconductor

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GT105N10F

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TO-220F

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Description:

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

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Mfr	Goford Semiconductor
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	10.5mOhm @ 11A, 10V
Power Dissipation (Max)	20.8W (Tc)
Supplier Device Package	TO-220F
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)