Goford Semiconductor
Product No:
G7K2N20HE
Manufacturer:
Package:
SOT-223
Batch:
-
Datasheet:
-
Description:
N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.4655
$0.4655
10
$0.3629
$3.629
100
$0.217645
$21.7645
500
$0.201495
$100.7475
1000
$0.137018
$137.018
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Mfr | Goford Semiconductor |
Series | - |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 700mOhm @ 1A, 10V |
Power Dissipation (Max) | 1.8W (Tc) |
Supplier Device Package | SOT-223 |
Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 10 V |
Drain to Source Voltage (Vdss) | 200 V |
Input Capacitance (Ciss) (Max) @ Vds | 568 pF @ 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |