G58N06F

Goford Semiconductor

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G58N06F

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TO-220F

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Description:

N60V, 35A,RD<13M@10V,VTH1.0V~2.4

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Mfr	Goford Semiconductor
Series	G
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	13mOhm @ 30A, 10V
Power Dissipation (Max)	44W (Tc)
Supplier Device Package	TO-220F
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	30006 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)