G50N03J

Goford Semiconductor

Product No:

G50N03J

Manufacturer:

Goford Semiconductor

Package:

TO-251

Batch:

-

Datasheet:

-

Description:

N30V,RD(MAX)<7M@10V,RD(MAX)<12M@

Quantity:

Delivery:

Payment:

In Stock : 3827

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.57

    $0.57

  • 10

    $0.49305

    $4.9305

  • 100

    $0.341145

    $34.1145

  • 500

    $0.285019

    $142.5095

  • 1000

    $0.242564

    $242.564

  • 2000

    $0.21603

    $432.06

  • 5000

    $0.204658

    $1023.29

  • 10000

    $0.189506

    $1895.06

  • 50000

    $0.187625

    $9381.25

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Product Information

Parameter Info

User Guide

Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V
Power Dissipation (Max) 48W (Tc)
Supplier Device Package TO-251
Gate Charge (Qg) (Max) @ Vgs 16.6 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1255 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)