FQPF3N80CYDTU

Fairchild Semiconductor

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FQPF3N80CYDTU

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TO-220F-3 (Y-Forming)

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Description:

MOSFET N-CH 800V 3A TO220F-3

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Mfr	Fairchild Semiconductor
Series	QFET®
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Formed Leads
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	4.8Ohm @ 1.5A, 10V
Power Dissipation (Max)	39W (Tc)
Supplier Device Package	TO-220F-3 (Y-Forming)
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Drain to Source Voltage (Vdss)	800 V
Input Capacitance (Ciss) (Max) @ Vds	705 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)