FDMD8900
Fairchild Semiconductor
Product No:
FDMD8900
Manufacturer:
Package:
12-Power3.3x5
Batch:
-
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, N
Quantity:
Delivery:
Payment:
In Stock : 15410 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
304
$0.9405
$285.912
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Product Information
Parameter Info
User Guide
| Mfr | Fairchild Semiconductor |
| Series | - |
| Package | Bulk |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 2.1W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 12-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | FDMD89 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 19A, 10V |
| Supplier Device Package | 12-Power3.3x5 |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2605pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 17A |
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