FCP4N60

Fairchild Semiconductor

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FCP4N60

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Package:

TO-220-3

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Description:

POWER FIELD-EFFECT TRANSISTOR, 3

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Mfr	Fairchild Semiconductor
Series	SuperFET™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 10V
Power Dissipation (Max)	50W (Tc)
Supplier Device Package	TO-220-3
Gate Charge (Qg) (Max) @ Vgs	16.6 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)